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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
777 pcs
|
777 pcs | On Request | 1 | On Request | On Request | 1021 | On Request | On Request | |
|
480 pcs
|
480 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Base Current (IB) | |
| Collector-Base Voltage (VCBO) | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Emitter-Base Voltage (VEBO) | |
| Frequency | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Thermal Resistance Junction-to-Case (RθJC) | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The 2N4920G is a medium-power PNP silicon transistor from ON Semiconductor, part of the 2N4918-2N4920 series. It features a maximum collector-emitter voltage of 80V, continuous collector current of 1A (with 3A capability based on current-handling), and power dissipation of 30W. The device offers low saturation voltage of 600mV at 1A collector current and a DC current gain (hFE) of minimum 30 at 500mA. It is designed for general-purpose power switching and amplifier applications, including driver circuits. The transistor is housed in a TO-225AA (TO-126-3) through-hole package, with a junction-to-case thermal resistance of 4.16°C/W. Operating temperature range is -65°C to 150°C. The part is RoHS3 compliant and has an MSL of 1 (unlimited).
| Qty | Low | High |
|---|---|---|
| 500+ | $0.43 | $0.43 |
| 634+ | $0.47 | $0.47 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
80V.
TO-225AA (TO-126-3) through-hole package.
-65°C to 150°C (junction).
RoHS3 Compliant.
1A continuous, with 3A capability based on current-handling.
Minimum 30 at Ic=500mA, Vce=1V.
2N4921, 2N4922, 2N4923.