2N4920G PNP bipolar transistor, 80V collector-emitter voltage, 1A collector current, 30W power dissipation. Designed for driver circuits, switching, and amplifier applications.
Mfr Part #:

2N4920G

Available from 2 distributors
Mfr Name: On Semiconductor
On Semiconductor
PNP bipolar transistor, 80V collector-emitter voltage, 1A collector current, 30W power dissipation. Designed for driver circuits, switching, and amplifier applications.
Total Stock: 1,257 pcs
$ Price Range: $0.43 - $0.47

2N4920G Available from 2 distributors

Authorised
Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
777 pcs
777 pcs On Request 1 On Request On Request 1021 On Request On Request
Non-Authorised Inventory information
480 pcs
480 pcs On Request 1 On Request On Request On Request On Request On Request

2N4920G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Base Current (IB)
Collector-Base Voltage (VCBO)
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Emitter-Base Voltage (VEBO)
Frequency
Mounting Type
Operating Temperature
Power
Storage Temperature
Supplier Device Package
Tape & Reel
Thermal Resistance Junction-to-Case (RθJC)
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

2N4920G Description

Short technical summary and product information.

The 2N4920G is a medium-power PNP silicon transistor from ON Semiconductor, part of the 2N4918-2N4920 series. It features a maximum collector-emitter voltage of 80V, continuous collector current of 1A (with 3A capability based on current-handling), and power dissipation of 30W. The device offers low saturation voltage of 600mV at 1A collector current and a DC current gain (hFE) of minimum 30 at 500mA. It is designed for general-purpose power switching and amplifier applications, including driver circuits. The transistor is housed in a TO-225AA (TO-126-3) through-hole package, with a junction-to-case thermal resistance of 4.16°C/W. Operating temperature range is -65°C to 150°C. The part is RoHS3 compliant and has an MSL of 1 (unlimited).

2N4920G Quick Information

Product Type: Bipolar Junction Transistor (BJT)
Series: 2N4920
Canonical Name: 2N4920G PNP Medium-Power Silicon Transistor
Subcategory: Medium-Power PNP Transistor

2N4920G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

2N4920G Estimated Pricing

Qty Low High
500+ $0.43 $0.43
634+ $0.47 $0.47

Estimated market price range - modelled values for guidance only, not live distributor offers.

2N4920G Features

  • 80V collector-emitter voltage rating.
  • 1A continuous collector current capability.
  • 30W power dissipation at 25°C case temperature.
  • Low saturation voltage of 600mV.
  • Complementary NPN transistors available.

2N4920G Applications

  • Used in driver circuits for medium-power loads.
  • Suitable for switching and amplifier applications.
  • Ideal for general-purpose power transistor designs.
  • Can be used in audio output stages.

2N4920G FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage of the 2N4920G?

80V.

What package does the 2N4920G come in?

TO-225AA (TO-126-3) through-hole package.

What is the operating temperature range?

-65°C to 150°C (junction).

Is the 2N4920G RoHS compliant?

RoHS3 Compliant.

What is the maximum collector current?

1A continuous, with 3A capability based on current-handling.

What is the DC current gain (hFE)?

Minimum 30 at Ic=500mA, Vce=1V.

What are the complementary NPN parts?

2N4921, 2N4922, 2N4923.

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