2N4920

The 2N4920 is a medium-power PNP silicon transistor in the 2N4918-2N4920 series from onsemi. It is designed for driver circuits, switching, and amplifier applications. The device provides a maximum collector-emitter voltage (VCEO) of 80 V, a maximum collector-base voltage of 80 V, and a maximum emitter-base voltage of 5 V. Continuous collector current is rated at 1 A, and it can handle 3 A based on datasheet current-handling capability notes. The DC current gain is specified at a minimum of 40 at IC = 50 mA and VCE = 1 V, with a transition frequency of 3 MHz.

The 2N4920 has a low collector-emitter saturation voltage of 0.6 V maximum at IB = 100 mA and IC = 1 A, which supports efficient saturated switching. It dissipates up to 30 W at a case temperature of 25°C, with a junction-to-case thermal resistance of 4.16 °C/W. Operating and storage junction temperature range is from -65°C to +150°C.

This transistor is supplied in a through-hole TO-225AA / TO-126-3 package with a TO-126 supplier device package, making it suited for standard PCB assembly. It is the PNP complement to the onsemi NPN transistors 2N4921, 2N4922, and 2N4923, enabling complementary circuit designs.