2N4919G The 2N4919G is a PNP bipolar junction transistor from On Semiconductor. It features a 60V collector-emitter breakdown voltage, 1A continuous collector current, and 30W power dissipation.
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2N4919G

Available from 2 distributors
Mfr Name: On Semiconductor
On Semiconductor
The 2N4919G is a PNP bipolar junction transistor from On Semiconductor. It features a 60V collector-emitter breakdown voltage, 1A continuous collector current, and 30W power dissipation.
Total Stock: 1,949 pcs
$ Price Range: $0.31 - $1.50

2N4919G Available from 2 distributors

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Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
1,500 pcs
1500 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
449 pcs
449 pcs On Request 1 On Request On Request On Request On Request On Request

2N4919G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Base Current (IB)
Collector-Base Voltage (VCBO)
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Emitter-Base Voltage (VEBO)
Frequency
Junction Temperature Range
Mounting Type
Operating Temperature
Power
Storage Temperature
Supplier Device Package
Tape & Reel
Thermal Resistance - Junction to Case
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

2N4919G Description

Short technical summary and product information.

The 2N4919G is a medium-power, high-performance PNP silicon transistor from the 2N4918-2N4920 series, manufactured by On Semiconductor. It is designed for driver circuits, switching, and general-purpose amplifier applications.

 

Key electrical specifications include a maximum collector-emitter voltage (VCEO) of 60V, continuous collector current of 1A, and a collector current handling capability up to 3A. The device offers a minimum DC current gain (hFE) of 30 at 500mA, a maximum VCE(sat) of 0.6V at 1A, and a transition frequency of 3MHz. Power dissipation is rated at 30W when mounted to a heatsink, with a junction-to-case thermal resistance of 4.16°C/W. The operating junction temperature range is -65°C to +150°C.

 

This transistor is supplied in a TO-225AA (TO-126-3) through-hole package, suitable for PCB mounting. The Pb-free package option is available. The complementary NPN types are the 2N4921, 2N4922, and 2N4923.

2N4919G Quick Information

Product Type: Bipolar Junction Transistor (BJT)
Series: 2N4918/2N4920 Series
Canonical Name: 2N4919G PNP Bipolar Transistor
Subcategory: PNP Transistor

2N4919G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

2N4919G Estimated Pricing

Qty Low High
1+ $1.50 $1.50
10+ $0.93 $0.93
100+ $0.61 $0.61
500+ $0.48 $0.48
1,000+ $0.41 $0.41
2,500+ $0.37 $0.37
5,000+ $0.33 $0.33
10,000+ $0.32 $0.32
25,000+ $0.31 $0.31

Estimated market price range - modelled values for guidance only, not live distributor offers.

2N4919G Features

  • PNP silicon transistor with 60V VCEO.
  • Maximum collector current of 1A continuous.
  • Power dissipation rated at 30W.
  • DC current gain of 30 at 500mA.
  • TO-126 through-hole package.

2N4919G Applications

  • Designed for driver circuits.
  • Suitable for switching applications.
  • Used in general purpose amplifier circuits.

2N4919G FAQs

6 frequently asked questions generated from this part’s specifications.
What is the operating temperature range of the 2N4919G?

The operating junction temperature range is -65°C to +150°C.

What package does the 2N4919G come in?

The 2N4919G is available in a TO-225AA / TO-126-3 through-hole package.

Is the 2N4919G RoHS compliant?

The RoHS status is listed as RoHS3 compliant, but this is unverified and should be confirmed with the manufacturer.

What is the maximum collector-emitter voltage (VCEO) for the 2N4919G?

The maximum VCEO is 60V.

What is the DC current gain (hFE) of the 2N4919G?

The minimum hFE is 30 at Ic=500mA and Vce=1V.

What is the maximum saturation voltage of the 2N4919G?

The maximum VCE(sat) is 0.6V at Ib=100mA and Ic=1A.

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