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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
4,000 pcs
|
4000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
2,500 pcs
|
2500 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
353 pcs
|
353 pcs | On Request | 1 | On Request | On Request | 909 | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Base Current (Max) | |
| Collector-Base Voltage (VCBO) | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Emitter-Base Voltage (VEBO) | |
| Frequency | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Supplier Device Package | |
| Tape & Reel | |
| Thermal Resistance - Junction to Case | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The 2N4918G is a medium-power PNP silicon transistor from On Semiconductor, designed for general-purpose driver circuits, switching, and amplifier applications. This device offers a collector-emitter voltage (Vceo) of 40V and a continuous collector current of 1A (with a maximum current-handling capability of 3A). Power dissipation is rated at 30W at case temperature 25°C.
Key electrical characteristics include a DC current gain (hFE) of 30 minimum at 500mA collector current and 1V Vce, and a low collector-emitter saturation voltage of 0.6V maximum at 1A collector current. The transition frequency is 3 MHz, making it suitable for low-frequency switching and linear amplification.
The transistor is housed in a TO-126 (TO-225AA) through-hole package, which is Pb-free and RoHS compliant. The operating junction temperature range is -65°C to 150°C. Thermal resistance from junction to case is 4.16°C/W, ensuring efficient heat dissipation when used with a heatsink. Complementary NPN parts are available (2N4921, 2N4922, 2N4923) for push-pull or complementary circuit designs.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.97 | $0.97 |
| 10+ | $0.65 | $0.65 |
| 100+ | $0.45 | $0.45 |
| 649+ | $0.46 | $0.46 |
| 3,000+ | $0.20 | $0.20 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter voltage (Vceo) is 40 V, and the collector-base voltage (Vcbo) is also 40 V.
The 2N4918G is available in a TO-225AA / TO-126-3 through-hole package, with the supplier device package designated as TO-126.
The operating junction temperature range is -65°C to 150°C.
According to the data, the 2N4918G is RoHS3 Compliant and Pb-Free (available). However, this compliance is unverified and confidence is low.
The minimum DC current gain (hFE) is 30 at a test condition of Ic=500mA and Vce=1V.
The maximum collector-emitter saturation voltage is 600mV at Ib=100mA and Ic=1A.
Yes, the complementary NPN parts are the 2N4921, 2N4922, and 2N4923 from On Semiconductor.