2N4918 The 2N4918 is a PNP medium-power silicon transistor designed for driver circuits, switching, and amplifier applications. It features a 40V collector-emitter voltage, 1A continuous collector current, and 30W power dissipation.
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2N4918

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The 2N4918 is a PNP medium-power silicon transistor designed for driver circuits, switching, and amplifier applications. It features a 40V collector-emitter voltage, 1A continuous collector current, and 30W power dissipation.
Total Stock: 20 pcs

2N4918 Available from 1 distributor

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2N4918 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Collector Current (Maximum @ actual current-handling capability)
Collector-Base Voltage (VCBO)
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Emitter-Base Voltage (VEBO)
Frequency
Mounting Type
Operating Temperature
Power
Supplier Device Package
Tape & Reel
Thermal Resistance - Junction to Case
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

2N4918 Description

Short technical summary and product information.

The 2N4918 is a PNP medium-power silicon transistor from ON Semiconductor, part of the 2N4918-2N4920 series. It is designed for general-purpose power switching and amplification in through-hole mounted applications.

 

This transistor features a maximum collector-emitter voltage (Vceo) of 40V, a continuous collector current of 1A (with a capability of up to 3A), and a maximum power dissipation of 30W at 25°C case temperature. It offers a DC current gain (hFE) of at least 30 at 500mA collector current, and a low saturation voltage of 600mV at 1A collector current.

 

The device is suitable for driver circuits, switching regulators, and amplifier output stages. Its complement NPN transistors (2N4921, 2N4922, 2N4923) allow for push-pull configurations. The TO-126 package provides good thermal performance with a junction-to-case thermal resistance of 4.16°C/W.

 

The 2N4918 is available in a through-hole TO-225AA / TO-126-3 package, with the supplier device package designated as TO-126. It is listed as RoHS3 compliant (unverified) and has an operating junction temperature range of -65°C to 150°C.

2N4918 Quick Information

Product Type: Bipolar Junction Transistor (BJT)
Series: 2N4918-2N4920 Series
Canonical Name: 2N4918 PNP Bipolar Transistor
Subcategory: Single PNP BJT

2N4918 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): Level 1 Unlimited
REACH Status: REACH Unaffected

2N4918 Features

  • PNP medium-power silicon transistor.
  • 40V collector-emitter voltage rating.
  • 1A continuous collector current capability.
  • 30W power dissipation at 25°C.
  • Low saturation voltage of 600mV.

2N4918 Applications

  • Ideal for driver circuit applications.
  • Suitable for general-purpose switching.
  • Used in amplifier output stages.
  • Complementary to NPN 2N4921 series.

2N4918 FAQs

7 frequently asked questions generated from this part’s specifications.
What are the voltage ratings for the 2N4918?

The maximum collector-emitter voltage (Vceo) is 40V, collector-base voltage (Vcbo) is 40V, and emitter-base voltage (Vebo) is 5V.

What package does the 2N4918 come in?

The 2N4918 is available in a through-hole TO-225AA / TO-126-3 package, with the supplier device package designated as TO-126.

What is the operating temperature range of the 2N4918?

The operating junction temperature range is -65°C to 150°C.

Is the 2N4918 RoHS compliant?

The part is listed as RoHS3 compliant, but this status is unverified. The datasheet mentions a Pb-Free option but does not explicitly state RoHS compliance.

What is the DC current gain (hFE) of the 2N4918?

The minimum DC current gain is 30 at Ic=500mA and Vce=1V.

What is the saturation voltage of the 2N4918?

The maximum collector-emitter saturation voltage is 600mV at Ib=100mA and Ic=1A.

What is the power dissipation of the 2N4918?

The maximum power dissipation is 30W at 25°C case temperature.

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