BC847B/215
Nexperia USA Inc.
The Nexperia USA Inc. BC847B/215 is a bipolar transistor. It is RoHS3 Compliant and has an MSL Level 1 rating.
| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
8 pcs
|
8 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| SVHC Present |
The 2N4912 is a silicon epitaxial NPN transistor manufactured by Solid State Devices Inc (SSDI). This component is housed in a hermetic metal package, offering robust protection and reliability.
Key electrical characteristics include a Collector-Emitter Breakdown Voltage (VCEO) of 80V and a Continuous Collector Current (IC) rating of 1.0A. The Total Power Dissipation (PD) at 25°C is 25W. The transistor exhibits a Collector-Emitter Saturation Voltage (VCE(sat)) of 0.6V at 1.0A collector current and 100mA base current.
Designed for versatility, the 2N4912 is suitable for driver circuits, switching applications, and amplifier circuits. Its thermal properties include a Junction Temperature Range of -65 to +200°C and a Junction-to-Case Thermal Resistance (RθJC) of 7°C/W.
This transistor operates within a wide temperature range, making it suitable for various environmental conditions. Its hermetic metal package ensures durability in demanding applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.09 | $0.09 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) is 80V.
The 2N4912 is housed in a hermetic metal package.
The operating junction temperature range is -65°C to 200°C.
The continuous collector current (IC) is 1.0A maximum.
The DC current gain (hFE) at IC=1A, VCE=1V is minimum 10 and typical 10.
The transition frequency (fT) is 22 MHz typical at IC=250mA, VCE=10V.
The collector-emitter saturation voltage (VCE(sat)) is 0.6V maximum at IC=1A, IB=100mA.