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1 pcs
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1 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The 2N4903 is a PNP silicon power transistor manufactured by ASI-Automation Systems Interconnect. It is designed for general purpose amplifier and switching applications. This transistor comes in a TO-3 package.
Key electrical characteristics include a maximum collector-emitter voltage (VCEO) of 80 Vdc and a continuous collector current (IC) of 5 Adc. The device has a maximum power dissipation (PD) of 87.5 Watts at 25°C and a thermal resistance (junction-to-case) of 2.0 °C/W. The operating and storage junction temperature range is -65 to +200 °C.
Dynamic characteristics include a current gain-bandwidth product (fT) of 4 MHz at 1.0 Adc and 10 Vdc. The DC current gain (hFE) is a minimum of 20 at 1.0 Adc and 2.0 Vdc, and a minimum of 7.0 at 5.0 Adc and 2.0 Vdc. The collector emitter saturation voltage (VCE(sat)) is a maximum of 0.4 Vdc at 1.0 Adc and 0.1 Adc, and 1.5 Vdc at 5.0 Adc and 1.0 Adc.
The 2N4903 is complementary to the NPN transistors 2N5067, 2N5068, and 2N5069. It is available as non-RoHS (Sn/Pb plating) or RoHS compliant by adding a "-PBF" suffix. High-reliability screened versions are available by adding an "HR" suffix.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.09 | $0.09 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) for the 2N4903 is 80 Vdc.
The continuous collector current (IC) for the 2N4903 is 5 Adc.
The 2N4903 transistor comes in a TO-3 package.
The maximum device dissipation (PD) for the 2N4903 is 87.5 Watts at 25°C.
The operating and storage junction temperature range for the 2N4903 is -65 to +200 °C.
The DC current gain (hFE) of the 2N4903 is a minimum of 20 at IC = 1.0Adc, VCE = 2.0Vdc, and a minimum of 7.0 at IC = 5.0Adc, VCE = 2.0Vdc.
The current gain-bandwidth product (fT) for the 2N4903 is a minimum of 4 MHz at IC = 1.0Adc, VCE = 10Vdc.