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The 2N4902 is a PNP silicon power transistor from Texas Instruments, manufactured using the epitaxial base process. It is suitable for general purpose amplifier and switching applications. This transistor series includes complementary NPN versions. The 2N4902 features a maximum collector-emitter voltage (VCEO) of -60V and a maximum collector current (IC) of 5A. It is housed in a TO-3 package and has a maximum junction temperature of 200°C. The device offers a typical DC current gain (hFE) ranging from 25 to 80 at an IC of -1A. Its maximum power dissipation is rated at 87W in free air at 25°C.
Key electrical parameters include a collector-base voltage (VCBO) of -60V, an emitter-base voltage (VEBO) of -5V, and a collector-emitter saturation voltage (VCEsat) of 400mV at 150mA. The minimum transition frequency (fT) is 4MHz. The 2N4902 is designed for through-hole mounting.
This transistor is a reliable choice for various electronic designs requiring PNP amplification or switching capabilities. Its robust construction and specified parameters make it suitable for demanding applications.
| Qty | Low | High |
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| 1+ | $0.77 | $0.77 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) for the 2N4902 is -60V.
The maximum continuous collector current (IC max) for the 2N4902 is 5A.
The 2N4902 transistor comes in a TO-3 package.
The typical DC current gain (hFE) for the 2N4902 is between 25 and 80 at an IC of -1A.
The maximum power dissipation (P TOT) for the 2N4902 is 87W in free air at 25°C.