| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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48 pcs
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48 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The 2N4902 is a PNP silicon power transistor manufactured using the epitaxial base process. It is designed for general purpose amplifier and switching applications. This transistor is part of a series that includes complementary NPN versions.
The key electrical parameters for the 2N4902 include a maximum collector-base voltage (VCBO) and collector-emitter voltage (VCEO) of -60V, and a maximum emitter-base voltage (VEBO) of -5V. The device can handle a maximum collector current (IC max) of 5A and has a saturation voltage (VCEsat) of 400mV at 150mA. The DC current gain (hFE) ranges from 25 to 80 at IC=-1A.
Thermal characteristics include a maximum junction temperature (TJ max) of 200°C and a maximum power dissipation (PTOT max) of 87W in free air at 25°C. The minimum cutoff frequency (fT min) is 4MHz.
The 2N4902 is housed in a TO-3 package and is suitable for through-hole mounting. It is classified as a PNP power transistor and is considered suitable for new designs.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.20 | $1.20 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) for the 2N4902 is -60V.
The maximum collector current (IC max) for the 2N4902 is 5A.
The 2N4902 transistor comes in a TO-3 package.
The maximum junction temperature (TJ max) for the 2N4902 is 200°C.
The DC current gain (hFE) for the 2N4902 ranges from 25 to 80 at IC=-1A.