LM431ACZXA
On Semiconductor
The LM431ACZXA from On Semiconductor is an adjustable shunt voltage reference. It offers a wide output voltage range and is suitable for various power management applications.
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9 pcs
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9 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The 2N4900 from Signetics is a PNP silicon medium power transistor. It is housed in a TO-66 package and is suitable for various power applications.
Key electrical characteristics include a maximum collector-emitter voltage (VCEO) of 80V for the 2N4900 variant, a maximum collector current (IC) of 4.0 Adc, and a maximum base current (IB) of 1.0 Adc. The device offers a DC current gain (hFE) ranging from 10 to 40 depending on the collector current. Saturation voltages are also specified, with VCE(sat) at a maximum of 0.6 Vdc and VBE(sat) at a maximum of 1.3 Vdc when operating at 1.0 Adc collector current and 0.1 Adc base current.
Thermal specifications include a total device dissipation (PD) of 25 Watts at 25°C case temperature, with a derating of 0.143 W/°C above that temperature. The operating and storage junction temperature range is -65°C to +200°C. The thermal resistance from junction to case (ӨJC) is 7.0 °C/W.
This transistor is available in a TO-66 case with through-hole mounting. It is designed for applications requiring medium power handling capabilities.
| Qty | Low | High |
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| 1+ | $0.09 | $0.09 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
80V.
4.0A.
25W at 25°C case temperature.
TO-66 metal case, through-hole mounting.
-65 to +200°C.
Minimum 40.
0.6V maximum at IC=1A, IB=0.1A.
