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1 pcs
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1 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The RCA 2N4900 is a PNP silicon medium power transistor designed for high-reliability applications. It features a TO-66 package and is suitable for through-hole mounting.
Key electrical characteristics include a maximum Collector-Emitter Voltage (VCEO) of 80V for the 2N4900 variant, a continuous Collector Current (IC) of up to 4.0A, and a Base Current (IB) of 1.0A. The device offers a DC Current Gain (hFE) ranging from 10 to 40 depending on the operating current. Saturation voltages are also specified, with VCE(sat) at a maximum of 0.6V and VBE(sat) at a maximum of 1.3V when operating at 1.0A collector current and 0.1A base current.
Thermal performance is supported by a junction-to-case thermal resistance (ӨJC) of 7.0 °C/W and a maximum power dissipation (PD) of 25 Watts at 25°C. The operating and storage junction temperature range is -65°C to +200°C.
This transistor is available in standard and RoHS compliant versions. Its robust specifications make it suitable for various medium power switching and amplification tasks in electronic circuits.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.09 | $0.09 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
80 Vdc.
TO-66 through-hole package.
-65 to +200 °C.
4.0 Adc maximum.
25 Watts at case temperature 25°C.
20 (VCE = 1.0 Vdc, IC = 500 mAdc).
0.6 Vdc maximum at IC = 1.0 Adc, IB = 0.1 Adc.