BC847B/215
Nexperia USA Inc.
The Nexperia USA Inc. BC847B/215 is a bipolar transistor. It is RoHS3 Compliant and has an MSL Level 1 rating.
| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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2 pcs
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2 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| SVHC Present |
The 2N4898 is a PNP Silicon Medium Power Transistor manufactured by Motorola Semiconductor. This series offers devices with Collector-Emitter Voltage (VCEO) ratings ranging from 40V to 80V, and a continuous Collector Current (IC) capability of up to 4.0A. The transistors are housed in a TO-66 package, suitable for through-hole mounting.
Key electrical characteristics include a DC Current Gain (hFE) of up to 100, a Collector Emitter Saturation Voltage (VCE(sat)) of 0.6V maximum, and a Base Emitter Saturation Voltage (VBE(sat)) of 1.3V maximum. The current gain-bandwidth product (fT) is a minimum of 3.0 MHz, and the output capacitance (Cob) is a maximum of 100 pF.
These transistors are designed for medium power applications. The operating and storage junction temperature range is -65 to +200 °C. The device is available in non-RoHS (Sn/Pb plating) and RoHS compliant versions.
| Qty | Low | High |
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| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The 2N4898 series offers Collector-Emitter Voltage (VCEO) ratings of 40V, 60V, and 80V.
The continuous Collector Current (IC) for the 2N4898 is a maximum of 4.0 Adc.
The 2N4898 transistor comes in a TO-66 package.
The operating and storage junction temperature range for the 2N4898 is -65 to +200 °C.
The DC Current Gain (hFE) for the 2N4898 is a minimum of 40 at 50mAdc, 20 at 500mAdc, and 10 at 1.0Adc.
The Collector Emitter Saturation Voltage (VCE(sat)) for the 2N4898 is a maximum of 0.6 Vdc at 1.0Adc.
The Base Emitter Saturation Voltage (VBE(sat)) for the 2N4898 is a maximum of 1.3 Vdc at 1.0Adc.