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46 pcs
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46 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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22 pcs
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22 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The 2N4898 from On Semiconductor is a PNP Silicon Medium Power Transistor designed for various electronic applications. This device offers a range of collector-emitter voltages, with the 2N4898 variant rated up to 40V, the 2N4899 up to 60V, and the 2N4900 up to 80V. It supports a continuous collector current of up to 4A and a base current of 1A.
Key electrical characteristics include a DC current gain (hFE) ranging from 10 to 40 depending on the collector current. The transistor exhibits a collector emitter saturation voltage (VCE(sat)) of 0.6V and a base emitter saturation voltage (VBE(sat)) of 1.3V at specified test conditions. The current gain-bandwidth product (fT) is a minimum of 3 MHz, and the output capacitance (Cob) is a maximum of 100 pF.
This medium power transistor is housed in a TO-66 package, suitable for through-hole mounting. The operating and storage junction temperature range is from -65°C to +200°C. The device is available in standard, RoHS compliant (with -PBF suffix), and high-reliability screened versions (HR suffix).
With its robust specifications, the 2N4898 series is suitable for applications requiring reliable medium power switching and amplification.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The 2N4898 has a maximum collector-emitter voltage (VCEO) of 40 Vdc, 60 Vdc, or 80 Vdc depending on the specific variant.
The maximum continuous collector current (IC) is 4 Adc.
The total device dissipation is 25 Watts at a case temperature of 25°C, derating linearly at 0.143 W/°C above 25°C.
The operating and storage junction temperature range is -65°C to +200°C.
The 2N4898 is available in a TO-66 case.
The minimum DC current gain (hFE) is 40 at IC=50mA, 20 at IC=500mA, and 10 at IC=1A, all with VCE=1V.
The maximum collector-emitter saturation voltage (VCE(sat)) is 0.6 Vdc at IC=1A and IB=0.1A.