| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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325 pcs
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325 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The 2N4870 is a silicon PN unijunction transistor designed for oscillator, triggering and timing applications. It is manufactured by NTE Electronics and housed in a through-hole TO-92 package (TO-226-3, TO-92-3).
Key electrical characteristics include a maximum emitter reverse voltage of 30 V, interbase voltage of 35 V, RMS emitter current of 1.5 A, and RMS power dissipation of 300 mW. The intrinsic standoff ratio ranges from 0.56 to 0.75 at VB2B1=10V, and interbase resistance from 4.0 to 9.1 kΩ at VB2B1=3.0V. The device operates over a junction temperature range of -65°C to 125°C and can be stored from -65°C to 150°C.
The 2N4870 is suitable for relaxation oscillators, timing circuits, and triggering SCRs. Its through-hole mounting and TO-92 package allow easy integration in breadboard and PCB designs.
30 V
TO-226-3, TO-92-3 (TO-226AA) with a through-hole mounting. The supplier device package is TO-92.
Operating junction temperature: -65°C to 125°C. Storage temperature: -65°C to 150°C.
0.56 to 0.75 at VB2B1=10V.
4.0 to 9.1 kΩ at VB2B1=3.0V.
RoHS3 compliant (unverified).