| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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36 pcs
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36 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The CENTRAL SEMICONDUCTOR 2N4858A is an N-Channel Silicon JFET specifically designed for analog switching and chopper applications. This device operates with a maximum Drain-Source Voltage (Vds) of 40V and a Drain-Gate Voltage (Vdg) of 40V. It can handle a Forward Gate Current (Igf) of up to 50mA and has a maximum Power Dissipation (Pd) of 360mW at 25°C.
The JFET is housed in a TO-18 case, a common package for discrete semiconductors, suitable for through-hole mounting. Key electrical characteristics include a Gate-Source Cutoff Voltage (Vgs(off)) ranging from 0.8V to 4.0V and a Drain-Source On-State Voltage (Vds(on)) of 0.5V at 5.0mA. The On-Resistance (Rds(on)) is a maximum of 60Ω at 1.0kHz.
Capacitance values are specified for the 2N4858A variant, with Input Capacitance (Ciss) at 10pF and Reverse Transfer Capacitance (Crss) at 3.5pF, both measured at 1.0MHz. Switching times are also provided, with Turn-On Delay Time (td) and Turn-On Rise Time (tr) at 8.0ns, and Turn-Off Delay Time (toff) at 80ns for the 2N4858A.
This component is suitable for applications requiring reliable analog switching and chopping functionalities. Its operating and storage junction temperature range is from -65°C to +200°C.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage is 40V.
The drain current (IDSS) is between 8mA and 80mA at VDS=15V.
The on-resistance is 60Ω maximum at VGS=0.
The power dissipation is 360mW maximum at TA=25°C.
The 2N4858A is available in a TO-18 through-hole package.
The operating and storage junction temperature range is -65°C to +200°C.
The input capacitance is 10pF and the reverse transfer capacitance is 3.5pF.