| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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3,362 pcs
|
3362 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
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| AEC Qualified | |
| Automotive Grade | |
| Current | |
| Industrial Grade | |
| Medical Grade | |
| Military Grade | |
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The Central Semiconductor 2N4852 is a silicon PN unijunction transistor designed for timing, sensing, and trigger circuits.
Key electrical characteristics include an intrinsic standoff ratio of 0.70 to 0.85 (VB2B1=10V), interbase resistance of 4.7 to 9.1 kΩ (VB2B1=3V), emitter reverse current of 100 nA maximum, peak point current of 2 µA maximum, valley current of 4 mA maximum, and typical base 1 to emitter voltage of 5 V.
Maximum ratings are: emitter reverse voltage 30 V, interbase voltage 35 V, RMS emitter current 50 mA, peak emitter current 1.5 A (duty cycle ≤1%, PRR≤10pps), power dissipation 300 mW, operating junction temperature -65 to +125 °C, and storage temperature -65 to +200 °C.
The device is housed in a TO-18 (UJT) metal can package with through-hole mounting and 3 leads. It is suitable for timing circuits, sensing applications, and trigger circuits.
The maximum emitter reverse voltage is 30 V and the maximum interbase voltage is 35 V.
The 2N4852 is available in a TO-206AA, TO-18-3 Metal Can package (through-hole).
The operating junction temperature range is -65 to +125 °C.
The 2N4852 is listed as RoHS3 Compliant, but this status is unverified.
The intrinsic standoff ratio is 0.70 to 0.85 at VB2B1=10V.
The interbase resistance is 4.7 to 9.1 kΩ at VB2B1=3V.
The peak emitter current is 1.5 A maximum (duty cycle ≤1%, PRR≤10pps).