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5 pcs
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5 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Central Semiconductor 2N4427 is a silicon NPN epitaxial planar RF transistor. It is housed in a hermetically sealed TO-39 package, making it suitable for demanding applications.
This transistor is designed for high-frequency amplifier applications. Key electrical characteristics include a collector-emitter voltage (V_CEO) of 20V, a continuous collector current (I_C) of 400mA, and a maximum power dissipation of 1.0W (or 3.5W at 25°C case temperature). It boasts a transition frequency (fT) of 500MHz at 15V and 50mA.
The 2N4427 is specified with a collector-base voltage (V_CBO) of 40V and an emitter-base voltage (V_EBO) of 2.0V. Its DC current gain (hFE) ranges from 10 to 200 at 100mA collector current. The operating and storage junction temperature range is -65°C to +200°C.
This component is suitable for through-hole mounting. Its robust construction and electrical specifications make it a reliable choice for RF circuit designs.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.77 | $0.77 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (V_CEO) for the 2N4427 is 20V.
The maximum continuous collector current (I_C) for the 2N4427 is 400mA.
The transition frequency (fT) of the 2N4427 is 500MHz at 15V collector-emitter voltage and 50mA collector current.
The 2N4427 is available in a TO-39 case.