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2N4427 The 2N4427 is a silicon NPN epitaxial planar RF transistor in a hermetically sealed TO-39 package. It features a 40V collector-base voltage, 500MHz transition frequency, and 400mA continuous collector current.
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2N4427

Available from 1 distributors
Mfr Name: Microsemi Corporation
Microsemi Corporation
The 2N4427 is a silicon NPN epitaxial planar RF transistor in a hermetically sealed TO-39 package. It features a 40V collector-base voltage, 500MHz transition frequency, and 400mA continuous collector current.
✓ Total Stock: 2,524 pcs

2N4427 Available from 1 distributor

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Components Technology Group, Inc. ✓
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2,524 pcs
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2N4427 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Gain
Mounting Type
Power
Storage Temperature
Supplier Device Package
Transistor Type
Voltage
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2N4427 Description

Short technical summary and product information.

The 2N4427 is a silicon NPN epitaxial planar RF transistor designed for high frequency amplifier applications. It is manufactured by Microsemi Corporation and housed in a hermetically sealed TO-39 metal can package.

 

Key electrical specifications include a maximum collector-base voltage of 40V, collector-emitter voltage of 20V, and continuous collector current of 400mA. The device offers a minimum transition frequency of 500MHz at VCE=15V and IC=50mA, making it suitable for RF amplification up to VHF/UHF bands. DC current gain ranges from 10 to 200 at VCE=5V and IC=100mA.

 

The transistor is mounted in a through-hole TO-205AD/TO-39-3 package with lead configuration emitter, base, collector. Power dissipation is rated at 1.0W at 25°C ambient and 3.5W at 25°C case temperature. Operating junction temperature range is -65°C to +200°C.

2N4427 Quick Information

Product Type: RF Bipolar Transistor
Canonical Name: 2N4427 NPN RF Transistor
Subcategory: RF Transistor

2N4427 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

2N4427 Features

  • NPN silicon epitaxial planar RF transistor.
  • 500MHz minimum transition frequency.
  • 40V maximum collector-base voltage.
  • 400mA continuous collector current rating.
  • Hermetically sealed TO-39 metal can package.

2N4427 Applications

  • High frequency RF amplifier circuits.
  • VHF and UHF communication equipment.
  • RF driver and output stages.
  • Industrial RF power applications.

2N4427 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the package type of the 2N4427?

The 2N4427 is available in a TO-205AD, TO-39-3 Metal Can package (through-hole mounting). The supplier device package is TO-39.

What is the operating temperature range of the 2N4427?

The operating junction temperature range is -65°C to +200°C.

Is the 2N4427 RoHS compliant?

The 2N4427 is listed as RoHS3 Compliant, though this information is unverified and should be confirmed with the manufacturer.

What is the maximum collector current of the 2N4427?

The maximum continuous collector current (IC) is 400 mA.

What is the transition frequency of the 2N4427?

The minimum transition frequency (fT) is 500 MHz at VCE=15V, IC=50mA, f=200MHz.

What is the power dissipation of the 2N4427?

Maximum power dissipation is 1.0W at TA=25°C and 3.5W at TC=25°C.

What is the collector-emitter breakdown voltage of the 2N4427?

The minimum collector-emitter breakdown voltage (BVCEO) is 20V at IC=5mA.

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