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2N4416A-E3 The 2N4416A-E3 is an N-Channel JFET from Vishay Siliconix, featuring a 35V minimum gate-source breakdown voltage and 5mA minimum drain current. It is housed in a through-hole TO-206AF (TO-72) metal can package.
Mfr Part #:

2N4416A-E3

Available from 1 distributors
Mfr Name: Vishay
Vishay
The 2N4416A-E3 is an N-Channel JFET from Vishay Siliconix, featuring a 35V minimum gate-source breakdown voltage and 5mA minimum drain current. It is housed in a through-hole TO-206AF (TO-72) metal can package.
✓ Total Stock: 2,505 pcs
$ Price Range: $2.70

2N4416A-E3 Available from 1 distributor

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✓ Non-Authorised
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Xingangxin ✓
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2,505 pcs
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2505 pcs On Request 1 On Request On Request On Request On Request On Request
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2N4416A-E3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
FET Type
Input Capacitance (Ciss) (Max) @ Vds
Military Grade
Mounting Type
Operating Temperature
Power
Supplier Device Package
Tape & Reel
Voltage
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2N4416A-E3 Description

Short technical summary and product information.

The 2N4416A-E3 is an N-Channel JFET (Junction Field-Effect Transistor) designed for high-frequency amplification and switching applications. It is manufactured by Vishay Siliconix and comes in a hermetically sealed TO-206AF (TO-72) metal can package with through-hole mounting.

 

Key electrical specifications include a minimum gate-source breakdown voltage (V(BR)GSS) of 35V, a minimum drain current (IDSS) of 5mA at VDS = 15V and VGS = 0V, and a maximum power dissipation of 300mW. The device features a gate-source cutoff voltage (VGS(off)) range of -2.5V to -6V, a minimum forward transconductance (gfs) of 4.5mS, and a maximum input capacitance (Ciss) of 4pF at VDS = 15V. The operating junction temperature range is -50°C to 150°C.

 

This JFET is suitable for use in RF amplifiers, mixers, oscillators, and high-speed switching circuits due to its low noise and high-frequency performance characteristics. The TO-206AF package provides reliable hermetic sealing for demanding environments.

2N4416A-E3 Quick Information

Product Type: JFET
Canonical Name: 2N4416A-E3 N-Channel JFET
Subcategory: JFET

2N4416A-E3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

2N4416A-E3 Estimated Pricing

Qty Low High
200+ $2.70 $2.70

Estimated market price range - modelled values for guidance only, not live distributor offers.

2N4416A-E3 Features

  • N-Channel JFET for high-frequency amplification.
  • 35V minimum gate-source breakdown voltage.
  • 5mA minimum drain current at 15V.
  • 300mW maximum power dissipation.
  • Through-hole TO-206AF metal can package.

2N4416A-E3 Applications

  • RF amplifier and mixer circuits.
  • Oscillator and sample-and-hold circuits.
  • High-speed switching applications.
  • Low-level signal amplification.

2N4416A-E3 FAQs

6 frequently asked questions generated from this part’s specifications.
What is the package type for the 2N4416A-E3?

The 2N4416A-E3 is housed in a TO-206AF, TO-72-4 Metal Can package (supplier device package TO-206AF (TO-72)) with through-hole mounting.

What is the operating temperature range of the 2N4416A-E3?

The operating junction temperature range is -50°C to 150°C.

Is the 2N4416A-E3 RoHS compliant?

The part is listed as RoHS3 Compliant, but this status is unverified and should be treated as low confidence.

What is the gate-source breakdown voltage of the 2N4416A-E3?

The minimum gate-source breakdown voltage (V(BR)GSS) is 35V.

What is the drain current of the 2N4416A-E3?

The minimum drain current (IDSS) is 5mA at VDS = 15V and VGS = 0V.

What is the input capacitance of the 2N4416A-E3?

The maximum input capacitance (Ciss) is 4pF at VDS = 15V.

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