| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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9 pcs
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9 pcs | On Request | 1 | On Request | On Request | 8621 | On Request | On Request |
| Category | |
| Manufacturer Name | |
| SVHC Present |
The 2N4416A is a junction field-effect transistor (JFET) manufactured by Texas Instruments. It is designed for general-purpose switching and amplification applications. Key electrical characteristics include a minimum drain-source saturation current (IDSS) of 5mA, a minimum gate-source breakdown voltage (BVGSS) of -30V, and a minimum gate-source cutoff voltage (VGS(off)) of -6V. The device also features a forward transconductance (GFS) of 4500µS and a low gate reverse current (IGSS) of -0.1nA at 25°C. These specifications make the 2N4416A suitable for low-level analog signal processing, voltage-controlled resistor circuits, and RF amplifier stages. The part is an N-channel JFET, as indicated by the negative VGS(off) values. No package or temperature range data is available from the provided specifications.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The minimum IDSS is 5mA under test conditions VGS=0V, VDS=15V (pulsed).
The minimum BVGSS is -30V (or -35V depending on test condition) at VDS=0V, IG=-1μA.
The minimum VGS(off) is -6V (or -2.5V depending on test condition) at VDS=15V, ID=1nA.
The minimum GFS is 4500µS.
The maximum IGSS is -0.1nA at VGS=-20V, VDS=0V, TA=25°C.