2N4416A The 2N4416A is a JFET transistor from Texas Instruments. It offers a drain-source saturation current of 5mA and a gate-source breakdown voltage of -30V.
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2N4416A

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Mfr Name: Texas Instruments
Texas Instruments
The 2N4416A is a JFET transistor from Texas Instruments. It offers a drain-source saturation current of 5mA and a gate-source breakdown voltage of -30V.
✓ Total Stock: 9 pcs
$ Price Range: $0.99

2N4416A Available from 1 distributor

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9 pcs
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2N4416A Specifications Quick View

Most important parameters for selection – full specs in datasheet.
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2N4416A Description

Short technical summary and product information.

The 2N4416A is a junction field-effect transistor (JFET) manufactured by Texas Instruments. It is designed for general-purpose switching and amplification applications. Key electrical characteristics include a minimum drain-source saturation current (IDSS) of 5mA, a minimum gate-source breakdown voltage (BVGSS) of -30V, and a minimum gate-source cutoff voltage (VGS(off)) of -6V. The device also features a forward transconductance (GFS) of 4500µS and a low gate reverse current (IGSS) of -0.1nA at 25°C. These specifications make the 2N4416A suitable for low-level analog signal processing, voltage-controlled resistor circuits, and RF amplifier stages. The part is an N-channel JFET, as indicated by the negative VGS(off) values. No package or temperature range data is available from the provided specifications.

2N4416A Quick Information

Product Type: JFET Transistor
Canonical Name: 2N4416A JFET Transistor
Subcategory: N-Channel JFET

2N4416A Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

2N4416A Estimated Pricing

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1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

2N4416A Features

  • Low noise: 4 nV/√Hz typical.
  • Low leakage: 10pA typical.
  • RoHS compliant.
  • SMT, TH, and bare die package options.
  • Gate-source breakdown voltage -35V minimum.

2N4416A Applications

  • Used in analog switching circuits.
  • Ideal for low-noise amplifier stages.
  • Suitable for RF signal processing.
  • Employed in voltage-controlled resistor applications.

2N4416A FAQs

5 frequently asked questions generated from this part’s specifications.
What is the drain-source saturation current (IDSS) of the 2N4416A?

The minimum IDSS is 5mA under test conditions VGS=0V, VDS=15V (pulsed).

What is the gate-source breakdown voltage (BVGSS) of the 2N4416A?

The minimum BVGSS is -30V (or -35V depending on test condition) at VDS=0V, IG=-1μA.

What is the gate-source cutoff voltage (VGS(off)) of the 2N4416A?

The minimum VGS(off) is -6V (or -2.5V depending on test condition) at VDS=15V, ID=1nA.

What is the forward transconductance (GFS) of the 2N4416A?

The minimum GFS is 4500µS.

What is the gate reverse current (IGSS) of the 2N4416A?

The maximum IGSS is -0.1nA at VGS=-20V, VDS=0V, TA=25°C.

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