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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,000 pcs
|
2000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
368 pcs
|
368 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Base - Emitter Saturation Voltage | |
| Base-Emitter On Voltage | |
| Collector-Base Voltage (VCBO) | |
| Collector-Emitter Voltage (VCEO) | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Derate above 25°C | |
| Emitter Cutoff Current | |
| Emitter-Base Voltage (VEBO) | |
| ICBO (Maximum @ Vcb=100 V, T=100 °C) | |
| ICBO (Maximum @ Vcb=100 V, T=25 °C) | |
| Input Capacitance | |
| Mounting Type | |
| Operating Temperature | |
| Output Capacitance | |
| Power | |
| Supplier Device Package | |
| Tape & Reel | |
| Thermal Resistance - Junction to Case | |
| Thermal Resistance Junction-to-Ambient | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage | |
| hFE (Minimum/Maximum @ Ic=10 mA, Vce=10 V, f=30 MHz) | |
| hFE (Minimum/Maximum @ Vce=1 V, Ic=10 mA) |
The 2N4410 is an NPN bipolar junction transistor designed for general purpose amplification and switching applications requiring collector currents up to 50 mA. It is sourced from Process 16 and offers a collector-emitter voltage (VCEO) of 80 V, a collector-base voltage (VCBO) of 120 V, and a continuous collector current (IC) rating of 200 mA.
Electrical characteristics include a DC current gain (hFE) ranging from 60 to 400 at VCE = 1 V and IC = 10 mA, and a low collector-emitter saturation voltage (VCE(sat)) of 0.2 V maximum at IC = 1 mA. The device also features low leakage currents, with a maximum collector cutoff current (ICBO) of 10 nA at 25°C.
The 2N4410 is rated for a total power dissipation of 625 mW at 25°C ambient, with a derating factor of 5 mW/°C above 25°C. It is offered in a TO-92-3 through-hole package, suitable for manual and automated assembly. The operating junction temperature range is -55°C to +150°C.
The 2N4410 has a minimum collector-emitter breakdown voltage (VCEO) of 80 V.
The maximum continuous collector current (IC) is 200 mA.
The 2N4410 is available in a TO-226-3, TO-92-3 (TO-226AA) through-hole package, with the supplier device package being TO-92-3.
The operating and storage junction temperature range is -55°C to +150°C.
The DC current gain (hFE) is 60 minimum at VCE=1V, IC=1mA, and ranges from 60 to 400 at VCE=1V, IC=10mA.
The maximum total device dissipation is 625 mW at 25°C, derating at 5 mW/°C above 25°C.
The RoHS status is listed as RoHS3 Compliant, but this information is unverified and should be confirmed with the manufacturer.