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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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69,020 pcs
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69020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Tape & Reel | |
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The 2N4403TFR is a PNP bipolar junction transistor from On Semiconductor designed for general-purpose switching and amplification applications. It features a maximum collector-emitter breakdown voltage of 40V and a continuous collector current rating of 600mA, with a power dissipation of 625mW. The device offers a minimum DC current gain (hFE) of 100 at 150mA collector current and 2V collector-emitter voltage, and a typical transition frequency of 200MHz. The collector-emitter saturation voltage is typically 750mV at 500mA collector current and 50mA base current. The transistor is supplied in a TO-92-3 through-hole package (TO-226-3, TO-92-3 formed leads) and can operate over a junction temperature range of -55°C to +150°C. This part is suitable for low-power switching and linear amplification circuits where PNP polarity is required.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.28 | $0.28 |
| 10+ | $0.17 | $0.17 |
| 100+ | $0.11 | $0.11 |
| 500+ | $0.08 | $0.08 |
| 1,000+ | $0.07 | $0.07 |
| 2,000+ | $0.06 | $0.06 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter breakdown voltage (VCEO) is 40V.
The maximum continuous collector current (Ic) is 600mA.
It is supplied in a TO-92-3 through-hole package (TO-226-3, TO-92-3 formed leads).
The operating junction temperature range is -55°C to +150°C.
RoHS compliance is listed as RoHS3 compliant but is unverified.
The minimum DC current gain (hFE) is 100 at Ic=150mA and Vce=2V.
The typical transition frequency (fT) is 200MHz.