| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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10,000 pcs
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10000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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300 pcs
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300 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The 2N4403G from ON Semiconductor is a general-purpose PNP bipolar junction transistor (BJT). This component is designed for a variety of electronic switching and amplification applications.
Key electrical characteristics include a maximum collector current (Ic) of 600mA and a collector-emitter breakdown voltage (Vceo) of 40V. These specifications make it suitable for moderate power applications within its operating limits.
As a single PNP transistor, the 2N4403G is a fundamental building block in many analog and digital circuits. Its general-purpose nature allows for use in signal conditioning, switching, and amplification stages across different electronic designs. The part is categorized under Transistors - Bipolar (BJT) - Single, indicating its role as an individual component for discrete circuit design.
Further details regarding package type, mounting, and specific operating conditions would typically be found in the manufacturer's datasheet. However, its classification as a general-purpose transistor suggests broad applicability in consumer electronics, industrial controls, and other electronic systems requiring reliable bipolar transistor performance.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.09 | $0.09 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector current for the 2N4403G is 600mA.
The collector-emitter breakdown voltage of the 2N4403G is 40V.
The 2N4403G is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) for the 2N4403G is 1 Unlimited.
The REACH status for the 2N4403G is REACH Unaffected.