Ready to onboard?
Are you ready to join DistyParts and
grow your business?
| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
92,672 pcs
|
92672 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Frequency | |
| Lead Style | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| SVHC Present | |
| Supplier Device Package | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The 2N4401TAR is an NPN bipolar junction transistor manufactured by On Semiconductor. It is designed for general-purpose switching and amplification applications.
Key electrical specifications include a collector-emitter breakdown voltage (Vceo) of 40V, a continuous collector current (Ic) of 600mA, and a power dissipation of 625mW. The transistor offers a DC current gain (hFE) of minimum 100 at 150mA collector current and 1V Vce, and a transition frequency (ft) of 250MHz. The collector-emitter saturation voltage is typically 750mV at 50mA base current and 500mA collector current.
The device is housed in a through-hole TO-92-3 package (TO-226-3, TO-92-3 (TO-226AA) formed leads), suitable for PCB mounting. It operates over a junction temperature range of -55°C to 150°C.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.30 | $0.30 |
| 10+ | $0.18 | $0.18 |
| 100+ | $0.11 | $0.11 |
| 500+ | $0.08 | $0.08 |
| 1,000+ | $0.07 | $0.07 |
| 2,000+ | $0.06 | $0.06 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
40V.
TO-92-3 (through-hole).
-55°C to 150°C (junction).
It is marked as RoHS3 compliant, but this is unverified.
Minimum 100 at 150mA, 1V.
250MHz.
Maximum 750mV at 50mA base, 500mA collector.