| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
150,000 pcs
|
150000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Frequency | |
| Lead Style | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Supplier Device Package | |
| Tape & Reel | |
| Termination Style | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The 2N4401RLRAG is an NPN silicon general purpose transistor manufactured by On Semiconductor. It features a collector-emitter breakdown voltage of 40V and a continuous collector current rating of 600mA, making it suitable for a wide range of switching and amplification applications.
Electrical characteristics include a DC current gain (hFE) ranging from 100 to 300 at 150mA collector current, and a transition frequency of 250 MHz. The device is rated for a maximum power dissipation of 625mW at 25°C ambient temperature and 1.5W at 25°C case temperature. It operates over a junction temperature range of -55°C to 150°C.
The transistor is housed in a through-hole TO-92 (TO-226) package with formed leads, suitable for tape and reel packaging. The part is Pb-Free as confirmed by the datasheet.
The collector-emitter breakdown voltage (V(BR)CEO) is 40V minimum at Ic = 1.0 mA.
The maximum continuous collector current is 600 mA.
The operating junction temperature range is -55°C to 150°C.
It is available in a through-hole TO-226-3, TO-92-3 Long Body (Formed Leads) package, also known as TO-92 (TO-226).
The datasheet confirms the device is Pb-Free, but full RoHS compliance is unverified from the available data.
The DC current gain (hFE) ranges from 100 to 300 at Ic = 150 mA and Vce = 1 V.
The transition frequency (fT) is 250 MHz minimum at Ic = 20 mA and Vce = 10 V.