2N4401BU NPN bipolar junction transistor with 40V collector-emitter breakdown voltage and 600mA collector current. Housed in a TO-92-3 through-hole package.
Mfr Part #:

2N4401BU

Available from 2 distributors
Mfr Name: On Semiconductor
On Semiconductor
NPN bipolar junction transistor with 40V collector-emitter breakdown voltage and 600mA collector current. Housed in a TO-92-3 through-hole package.
✓ Total Stock: 34,519 pcs
$ Price Range: $0.06 - $0.26

2N4401BU Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
33,519 pcs
33519 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
1,000 pcs
1000 pcs On Request 1 On Request On Request On Request On Request On Request

2N4401BU Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Mounting Type
Operating Temperature
Power
Supplier Device Package
Tape & Reel
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

2N4401BU Description

Short technical summary and product information.

The 2N4401BU is an NPN bipolar junction transistor manufactured by On Semiconductor. It is designed for general-purpose switching and amplification applications.

 

Key electrical specifications include a collector-emitter breakdown voltage (Vceo) of 40V, a maximum collector current (Ic) of 600mA, and a power dissipation (Pd) of 625mW. The transistor offers a transition frequency (ft) of 250MHz and a minimum DC current gain (hFE) of 100 at 150mA, 1V. The collector-emitter saturation voltage (Vce(sat)) is 750mV maximum at 50mA base current and 500mA collector current.

 

The device is housed in a TO-92-3 through-hole package, suitable for manual insertion and prototyping. It operates over a junction temperature range of -55°C to 150°C. The part is RoHS3 compliant and REACH unaffected with an MSL rating of 1 unlimited.

2N4401BU Quick Information

Product Type: NPN Bipolar Junction Transistor (BJT)
Canonical Name: 2N4401BU NPN Bipolar Junction Transistor
Subcategory: Single NPN Transistor

2N4401BU Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

2N4401BU Estimated Pricing

Qty Low High
1+ $0.26 $0.26
10+ $0.16 $0.16
100+ $0.10 $0.10
500+ $0.07 $0.07
1,000+ $0.06 $0.06

Estimated market price range - modelled values for guidance only, not live distributor offers.

2N4401BU Features

  • NPN transistor with 40V Vceo rating.
  • Collector current up to 600 mA.
  • Transition frequency of 250 MHz.
  • Through-hole TO-92-3 package.
  • Operating temperature range -55°C to 150°C.

2N4401BU Applications

  • General-purpose switching and amplification.
  • Signal amplification in low frequency circuits.
  • Driver for small relays and LEDs.

2N4401BU FAQs

7 frequently asked questions generated from this part’s specifications.
What is the operating voltage of the 2N4401BU?

The collector-emitter breakdown voltage (Vceo) is 40V.

What package does the 2N4401BU come in?

It comes in a TO-92-3 through-hole package.

What is the operating temperature range of the 2N4401BU?

The operating junction temperature range is -55°C to 150°C.

Is the 2N4401BU RoHS compliant?

Yes, it is RoHS3 compliant.

What is the transistor type of the 2N4401BU?

It is an NPN bipolar junction transistor.

What is the DC current gain of the 2N4401BU?

The minimum DC current gain (hFE) is 100 at Ic=150mA and Vce=1V.

What is the transition frequency of the 2N4401BU?

The transition frequency (ft) is 250 MHz.

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