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2N4401 NPN bipolar junction transistor with 40V collector-emitter voltage, 600mA collector current, and 625mW power dissipation. Housed in a TO-92 through-hole package.
Mfr Part #:

2N4401

Available from 1 distributors
Mfr Name: NTE Electronics
NTE Electronics
NPN bipolar junction transistor with 40V collector-emitter voltage, 600mA collector current, and 625mW power dissipation. Housed in a TO-92 through-hole package.
✓ Total Stock: 600,000 pcs

2N4401 Available from 1 distributor

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✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Components Technology Group, Inc. ✓
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600,000 pcs
On Request
600000 pcs On Request 1 On Request On Request On Request On Request On Request
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2N4401 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Conflict Minerals
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Industrial Grade
Mounting Type
Operating Temperature
Power
Supplier Device Package
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage
Weight
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2N4401 Description

Short technical summary and product information.

The 2N4401 is a general-purpose NPN bipolar junction transistor designed for signal processing, switching, and amplification applications. It features a collector-emitter voltage (Vceo) of 40V, a continuous collector current of 600mA, and a power dissipation of 625mW. The DC current gain (hFE) is typically 100 at 150mA, 1V, with a maximum of 300. The transistor offers a gain bandwidth product of 250MHz, making it suitable for low to medium frequency circuits. The device is housed in a TO-92 through-hole package (TO-226-3) and is RoHS and REACH compliant. It is a complementary pair to the 2N4403 PNP transistor. Typical applications include signal amplification, switching circuits, and general-purpose electronic designs.

2N4401 Quick Information

Product Type: Bipolar Junction Transistor (BJT)
Canonical Name: 2N4401 NPN General Purpose Transistor
Subcategory: Single

2N4401 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

2N4401 Features

  • NPN bipolar junction transistor design.
  • Rated for 40V collector-emitter voltage.
  • Supports 600mA continuous collector current.
  • 625mW power dissipation capability.
  • TO-92 through-hole package.

2N4401 Applications

  • Ideal for signal amplification circuits.
  • Used in general-purpose switching applications.
  • Suitable for low-frequency driver stages.
  • Complements 2N4403 PNP transistor.

2N4401 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the operating voltage of the 2N4401 transistor?

The collector-emitter voltage (Vceo) is 40V.

What package is the 2N4401 available in?

The 2N4401 is available in a TO-92 through-hole package (TO-226-3).

What is the operating temperature range?

The operating junction temperature range is -55°C to 150°C.

Is the 2N4401 RoHS compliant?

Yes, the 2N4401 is RoHS3 compliant according to the datasheet.

What is the DC current gain (hFE) of the 2N4401?

The minimum hFE is 100 at Ic=150mA, Vce=1V, with a maximum of 300.

What is the saturation voltage of the 2N4401?

The collector-emitter saturation voltage is 750mV maximum at Ib=50mA, Ic=500mA.

What is the complementary PNP transistor for the 2N4401?

The recommended complementary PNP transistor is the 2N4403.

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