DistyParts Icon
2N4400TFR NPN bipolar junction transistor, 40V collector-emitter breakdown voltage, 600mA collector current, 625mW max power, in TO-92-3 through-hole package.
Mfr Part #:

2N4400TFR

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
NPN bipolar junction transistor, 40V collector-emitter breakdown voltage, 600mA collector current, 625mW max power, in TO-92-3 through-hole package.
✓ Total Stock: 1,000 pcs
$ Price Range: $0.04

2N4400TFR Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Bristol Electronics ✓
Non-Authorised Inventory information
1,000 pcs
On Request
1000 pcs On Request 1 On Request On Request On Request On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

2N4400TFR Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Lead Style
Mounting Type
Operating Temperature
Power
Supplier Device Package
Tape & Reel
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage
View Similar Products (0)

2N4400TFR Description

Short technical summary and product information.

The 2N4400TFR is an NPN bipolar junction transistor manufactured by ON Semiconductor. It is designed for general-purpose switching and amplification applications requiring moderate voltage and current handling.

 

Key electrical specifications include a maximum collector-emitter breakdown voltage of 40V and a maximum collector current of 600mA. The minimum DC current gain (hFE) is 50 at a collector current of 150mA and Vce of 1V. The maximum collector-emitter saturation voltage is 750mV at a base current of 50mA and collector current of 500mA.

 

The transistor can dissipate up to 625mW of power and operates over a junction temperature range of -55°C to 150°C. It is housed in a TO-92-3 through-hole package (TO-226-3, TO-92-3 formed leads) for easy mounting on printed circuit boards.

 

The device is indicated as RoHS3 compliant and has an MSL rating of 1 (unlimited).

2N4400TFR Quick Information

Product Type: Bipolar Junction Transistor (BJT)
Canonical Name: 2N4400TFR NPN Bipolar Transistor, 40V, 600mA, TO-92-3
Subcategory: Single BJT

2N4400TFR Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

2N4400TFR Estimated Pricing

Qty Low High
7,869+ $0.04 $0.04

Estimated market price range - modelled values for guidance only, not live distributor offers.

2N4400TFR Features

  • NPN bipolar junction transistor for general purpose.
  • 40V maximum collector-emitter breakdown voltage.
  • 600mA maximum continuous collector current.
  • 625mW maximum power dissipation capability.
  • Through-hole TO-92-3 package for easy mounting.

2N4400TFR Applications

  • Used in general purpose switching circuits.
  • Suitable for analog signal amplification.
  • Ideal for low to medium power applications.
  • Common in consumer electronics and industrial controls.

2N4400TFR FAQs

7 frequently asked questions generated from this part’s specifications.
What type of transistor is the 2N4400TFR?

It is an NPN bipolar junction transistor.

What is the maximum collector-emitter breakdown voltage?

40V maximum.

What is the maximum collector current?

600mA maximum.

What is the minimum DC current gain (hFE)?

Minimum 50 at Ic=150mA and Vce=1V.

What is the operating temperature range?

-55°C to 150°C (junction).

What package is the transistor available in?

TO-92-3 through-hole package (TO-226-3, TO-92-3 formed leads).

Is the 2N4400TFR RoHS compliant?

It is listed as RoHS3 compliant, but this is unverified.

Home

Categories