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1 pcs
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1 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The 2N4347 from RCA is an NPN silicon transistor suitable for various industrial and commercial applications, including high-fidelity audio amplifiers, series and shunt regulators, and power switches. It offers a low Collector-Emitter Saturation Voltage (VCE(sat)) of 1.0 Vdc (Max) at 2.0 Adc and a Collector-Emitter Sustaining Voltage (VCEO(sus)) of 120 Vdc (Min).
Key electrical characteristics include a continuous collector current of 3.0 Adc and a peak collector current of 8.0 Adc. The device has a total power dissipation of 100 W at 25°C and a thermal resistance (junction to case) of 1.75 °C/W. The transistor operates within a junction temperature range and has a storage temperature range of -65 to +200 °C.
This transistor is designed for applications requiring robust performance and reliability. Its specifications make it suitable for power switching and amplification tasks in demanding environments.
| Qty | Low | High |
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| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The minimum VCEO(sus) is 120 Vdc at IC=200 mAdc and IB=0.
The continuous collector current rating is 3 Adc, with a peak rating of 8 Adc.
Total device dissipation is 100 W at case temperature 25°C; derate linearly by 0.57 W/°C above 25°C.
The storage temperature range is -65°C to +200°C.
At IC=2.0 Adc and VCE=4.0 Vdc, hFE ranges from 15 to 60; at IC=5.0 Adc, the minimum is 10.
The typical VCE(sat) is 1.0 Vdc at IC=2.0 Adc and IB=200 mAdc, and 2.0 Vdc at IC=5.0 Adc and IB=0.63 Adc.
The minimum transition frequency is 200 kHz at VCE=4.0 Vdc, IC=0.5 Adc, and ftest=50 kHz.