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2N4343 The 2N4343 is a P-channel JFET transistor from On Semiconductor, designed for low noise applications. It offers high forward transadmittance and low on-resistance.
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2N4343

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The 2N4343 is a P-channel JFET transistor from On Semiconductor, designed for low noise applications. It offers high forward transadmittance and low on-resistance.
✓ Total Stock: 6 pcs
$ Price Range: $0.99

2N4343 Available from 1 distributor

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✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Bristol Electronics ✓
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6 pcs
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6 pcs On Request 1 On Request On Request On Request On Request On Request
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2N4343 Specifications Quick View

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2N4343 Description

Short technical summary and product information.

The 2N4343 is a P-channel JFET transistor manufactured by On Semiconductor. It is designed for applications requiring low noise, featuring an equivalent input noise voltage of 0.08 μV/√Hz maximum at 100 Hz. This device boasts a high forward transadmittance (Yfs) of 4000 μmhos minimum and a low drain-on resistance (RDS(on)) of 350 Ω maximum.

 

The transistor is housed in a TO-220-3 package and is suitable for through-hole mounting. Its absolute maximum ratings include an operating junction temperature of 125°C and a storage temperature range of -55°C to +125°C. The breakdown voltage (BVDSS) is rated at -25V, and the gate-to-source cutoff voltage (VGS(off)) is a maximum of 10V.

 

With its combination of low noise and high transadmittance, the 2N4343 is well-suited for various signal amplification and switching applications where performance and reliability are critical.

2N4343 Quick Information

Product Type: JFET Transistor
Canonical Name: 2N4343 P-Channel JFET
Subcategory: P-Channel

2N4343 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

2N4343 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

2N4343 Features

  • Low noise voltage of 0.08 μV/√Hz maximum.
  • High forward transadmittance up to 4000 μmhos minimum.
  • Low drain-on resistance of 350 Ω maximum.
  • P-channel JFET in TO-220-3 package.
  • Breakdown voltage rated at -25V.

2N4343 Applications

  • Suitable for low noise amplification.
  • Used in signal processing circuits.
  • Ideal for general purpose JFET applications.
  • Component for discrete semiconductor designs.

2N4343 FAQs

5 frequently asked questions generated from this part’s specifications.
What is the breakdown voltage for the 2N4343 JFET?

The source to gate breakdown voltage (BVDSS) for the 2N4343 is -25V.

What is the maximum drain-on resistance for the 2N4343?

The maximum drain "on" resistance (RDS(on)) for the 2N4343 is 350 Ω.

What is the typical forward transadmittance of the 2N4343?

The forward transadmittance (Yfs) for the 2N4343 is a minimum of 4000 μmhos.

What is the operating junction temperature for the 2N4343?

The operating junction temperature for the 2N4343 is a maximum of 125°C.

What is the package type for the 2N4343?

The 2N4343 comes in a TO-220-3 package.

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