| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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11 pcs
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11 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Tape & Reel | |
| Voltage |
The 2N4341 is an N-channel junction field-effect transistor (JFET) from Central Semiconductor Corp. It is designed for low-frequency and low-noise applications. The device features a drain-source voltage rating of 50V and a power dissipation of 325mW. It offers a drain current range of 3.0 mA to 9.0 mA and a forward transconductance between 2.0 mmho and 60 mmho. The gate-source cutoff voltage ranges from 2.0V to 6.0V. Input capacitance is 6 pF at 15V, and reverse transfer capacitance is 3.0 pF. The 2N4341 is housed in a TO-18 metal can package (TO-206AA) with through-hole mounting and operates over a temperature range of -65°C to 200°C. This JFET is suitable for analog switching, high-impedance buffer stages, and low-noise amplifier front ends.
The drain-source voltage rating (Vdss) is 50V.
The 2N4341 is available in a TO-206AA, TO-18-3 Metal Can package (through-hole).
The operating temperature range is -65°C to 200°C (junction temperature).
The RoHS status is listed as RoHS3 compliant, but this is unverified and should be confirmed from the manufacturer or datasheet.
The gate-source cutoff voltage (VGS(off)) ranges from 2.0V to 6.0V.
The drain current (IDSS) ranges from 3.0 mA to 9.0 mA.
The power dissipation is 325mW.