| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,566 pcs
|
3566 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Configuration | |
| Frequency | |
| Input Capacitance | |
| Lead Style | |
| Mounting Type | |
| Noise Figure | |
| Power Dissipation | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Voltage |
The 2N4340 is a silicon N-Channel JFET from Central Semiconductor Corp, mounted in a hermetically sealed TO-18 metal can package (TO-206AA, TO-18-3). It is designed for low-level, low noise amplifier applications.
Electrical characteristics include a maximum drain-source, gate-source, and gate-drain voltage of 50V, with a gate current limit of 50 mA. The drain current (Idss) ranges from 1.2 to 3.6 mA at Vds=15V, and total power dissipation is 325 mW. The gate-source cutoff voltage (Vgs(off)) is between 1.0 and 3.0V.
The JFET exhibits a forward transconductance of 1.3 to 3.0 mS and low input capacitance of 6.0 pF and reverse transfer capacitance of 2.0 pF. The noise figure is typically 1.0 dB at 1 kHz with a 1 MΩ source resistance. The device operates over a junction temperature range of -65 to +200 °C.
This through-hole device is suitable for RF and low-level signal processing where low noise and hermetically sealed reliability are required.
The maximum drain-source, gate-source, and gate-drain voltages are all 50V.
The 2N4340 is available in a TO-206AA/TO-18-3 Metal Can through-hole package (TO-18).
The operating and storage junction temperature range is -65 to +200 °C.
The 2N4340 is listed as RoHS3 Compliant, but this information is unverified and should be reviewed.
The drain current (Idss) ranges from 1.2 to 3.6 mA at Vds=15V and Vgs=0V.
The noise figure is a maximum of 1.0 dB at Vds=15V, f=1.0 kHz, Rg=1.0 MΩ.