| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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2,498 pcs
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2498 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Technology |
The InterFET 2N4339 is an N-Channel Junction Field-Effect Transistor (JFET) suitable for various electronic applications. This component offers a drain-source breakdown voltage of 15V and a gate-source breakdown voltage of 50V. It can handle a continuous drain current of up to 100 pA and has a maximum power dissipation of 300mW.
The JFET features a drain-source resistance of 1700 Ohms and a minimum forward transconductance of 800 µS. The typical gate-source cutoff voltage is 1.8V, and the input capacitance (Ciss) is 7 pF. The device is constructed using silicon technology and comes in a single configuration.
Designed for through-hole mounting, the 2N4339 is housed in a TO-18 package and is supplied in bulk packaging. Its specifications make it suitable for applications requiring precise current control and amplification.
This JFET is part of the 2n43 series from InterFET, known for providing reliable discrete semiconductor components. The component's characteristics are well-suited for general-purpose amplification and switching tasks in electronic designs.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.13 | $2.13 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source breakdown voltage is 15V.
The maximum power dissipation is 300mW.
The 2N4339 is supplied in a TO-18 package.
The continuous drain current is 100 pA.
The minimum forward transconductance is 800 µS.