DistyParts Icon
2N4339 2N4339 is an N-Channel JFET with 50V gate-source breakdown voltage, 0.5-1.5mA saturation drain current, and through-hole TO-206AA package.
Mfr Part #:

2N4339

Available from 1 distributors
Mfr Name: Vishay
Vishay
2N4339 is an N-Channel JFET with 50V gate-source breakdown voltage, 0.5-1.5mA saturation drain current, and through-hole TO-206AA package.
✓ Total Stock: 5,500 pcs
$ Price Range: $3.12

2N4339 Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Components Technology Group, Inc. ✓
Non-Authorised Inventory information
5,500 pcs
On Request
5500 pcs On Request 1 On Request On Request On Request On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

2N4339 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
FET Type
Input Capacitance (Ciss) (Max) @ Vds
Military Grade
Mounting Type
Operating Temperature
Power
Supplier Device Package
Tape & Reel
Voltage
View Similar Products (0)

2N4339 Description

Short technical summary and product information.

The 2N4339 is an N-Channel JFET designed for low-level signal amplification and high-impedance applications. It features a gate-source breakdown voltage of 50V and a saturation drain current range of 0.5mA to 1.5mA at VDS=15V and VGS=0V. The forward transconductance is specified between 0.8mS and 2.4mS at 1kHz, making it suitable for sensitive amplifier stages.

 

This device is housed in a hermetically sealed TO-206AA (TO-18) metal can package with through-hole mounting. It operates over a junction temperature range of -55°C to 175°C with a maximum power dissipation of 300mW. The input capacitance is typically 7pF at VDS=15V.

 

Typical applications include high-gain low-noise amplifiers, low-current battery-powered amplifiers, infrared detector amplifiers, and ultrahigh input impedance pre-amplifiers. The low cutoff voltage allows operation from low-voltage power supplies down to 1V.

2N4339 Quick Information

Product Type: JFET
Canonical Name: 2N4339 N-Channel JFET
Subcategory: JFETs

2N4339 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
REACH Status: REACH Unaffected

2N4339 Estimated Pricing

Qty Low High
200+ $3.12 $3.12

Estimated market price range - modelled values for guidance only, not live distributor offers.

2N4339 Features

  • N-Channel JFET with 50V breakdown voltage.
  • Saturation drain current 0.5 to 1.5 mA.
  • Forward transconductance 0.8 to 2.4 mS.
  • Through-hole TO-206AA metal can package.
  • Operating temperature -55°C to 175°C.

2N4339 Applications

  • High-gain low-noise amplifier circuits.
  • Low-current battery-powered amplifier designs.
  • Infrared detector signal amplification.
  • Ultrahigh input impedance pre-amplifiers.
  • Low-voltage power supply applications.

2N4339 FAQs

5 frequently asked questions generated from this part’s specifications.
What is the gate-source breakdown voltage of the 2N4339?

The minimum gate-source breakdown voltage is 50V.

What is the operating temperature range of the 2N4339?

The operating junction temperature range is -55°C to 175°C.

What package does the 2N4339 come in?

The 2N4339 is available in a TO-206AA (TO-18) through-hole metal can package.

What is the saturation drain current of the 2N4339?

The saturation drain current (IDSS) is 0.5 mA minimum and 1.5 mA maximum at VDS=15V and VGS=0V.

What is the power dissipation of the 2N4339?

The maximum power dissipation is 300 mW.

Home
Account

Categories