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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
179 pcs
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179 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| DC Current Gain (hFE) (Min) @ Ic, Vce | |
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| Supplier Device Package | |
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| Vce Saturation (Max) @ Ib, Ic | |
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The 2N4264 from On Semiconductor is a general-purpose NPN bipolar junction transistor designed for low-power switching and amplification applications.
Electrical characteristics include a maximum collector-emitter voltage of 15V, a maximum collector current of 200mA, and a DC current gain (hFE) minimum of 40 at 30mA collector current and 1V collector-emitter voltage. The transistor offers a transition frequency of 350 MHz and a maximum collector-emitter saturation voltage of 350mV at 10mA base current and 100mA collector current.
The device is housed in a TO-92 through-hole package, suitable for manual prototyping and low-volume production. The operating junction temperature range is -55°C to 150°C.
| Qty | Low | High |
|---|---|---|
| 956+ | $0.31 | $0.31 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
-55°C to 150°C (junction temperature).
Through-hole TO-92 package (TO-226-3, TO-92-3).
Precomputed as RoHS3 Compliant, but this is unverified and conflicting distributor data exists.
Maximum collector current 200mA; maximum collector-emitter voltage 15V.