| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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56 pcs
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56 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Manufacturer Name | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Supplier Device Package | |
| Tape & Reel | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The 2N4236 is a PNP bipolar junction transistor manufactured by Microchip Technology. It is designed for general purpose switching and linear amplification applications. Key electrical characteristics include a collector-emitter breakdown voltage of 80V, a continuous collector current rating of 1A, and a power dissipation of 1W. The DC current gain (hFE) is a minimum of 30 at a collector current of 250mA and collector-emitter voltage of 1V. The collector-emitter saturation voltage is a maximum of 600mV at a base current of 100mA and collector current of 1A.
The transistor is housed in a TO-205AD (TO-39-3 Metal Can) package, which is a through-hole mounting type. It can operate over a junction temperature range of -65°C to 200°C. The device is reported as RoHS3 compliant, REACH unaffected, and has a moisture sensitivity level (MSL) of 1 (unlimited).
This transistor is suitable for medium-power switching circuits, driver stages, and signal amplification where PNP polarity is required. The TO-39 metal can package provides robust thermal performance and mechanical durability.
| Qty | Low | High |
|---|---|---|
| 1+ | $40.35 | $40.35 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
PNP.
80 V.
1 A.
-65°C to 200°C.
TO-205AD, TO-39-3 Metal Can (through-hole).
Yes, RoHS3 compliant.
Minimum 30 at Ic=250mA, Vce=1V.