| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
100,000 pcs
|
100000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Frequency | |
| Lead Style | |
| Military Grade | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Storage Temperature | |
| Supplier Device Package | |
| Termination Style | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The 2N4235 is a PNP silicon power transistor designed for general-purpose power amplification and switching applications. It features a collector-emitter voltage (VCEO) of 60V, collector-base voltage (VCBO) of 60V, and emitter-base voltage (VEBO) of 7V. The continuous collector current is rated at 1A with a base current of 0.5A. Power dissipation is 1W at ambient temperature (25°C) and 6W at case temperature (25°C), with thermal resistance of 29°C/W junction-to-case and 175°C/W junction-to-ambient.
The transistor offers a DC current gain (hFE) of minimum 40 at Ic=100mA and Vce=1V, and a maximum collector-emitter saturation voltage of 600mV at Ib=125mA and Ic=1A. The transition frequency is 3 MHz. The device is housed in a hermetically sealed TO-205AD (TO-39) metal can package with through-hole mounting and solder terminals.
According to the datasheet, this transistor family is qualified to MIL-PRF-19500/580 up to JANTXV level for high-reliability applications. A RoHS compliant version is available. The operating junction temperature range is -65°C to 200°C.
60V.
1A.
TO-205AD (TO-39) through-hole.
-65°C to 200°C junction temperature.
RoHS compliant version available per datasheet, but not verified for this specific part.
Minimum 40 at Ic=100mA, Vce=1V.
3 MHz.