| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
38 pcs
|
38 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Military Grade | |
| Mounting Type | |
| Power | |
| Supplier Device Package | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The 2N4234 is a PNP bipolar junction transistor from On Semiconductor, designed for general-purpose switching and amplification applications. It offers a maximum collector-emitter breakdown voltage of 40V and a maximum collector current of 1A, with a maximum power dissipation of 6W. The DC current gain (hFE) is a minimum of 30 at 250mA collector current and 1V collector-emitter voltage, and the maximum collector-emitter saturation voltage is 600mV at 125mA base current and 1A collector current. The transistor is housed in a through-hole TO-205AD (TO-39-3 Metal Can) package, with the supplier device package designated as TO-39. It is suitable for a variety of low-to-medium power circuits where PNP polarity is required.
| Qty | Low | High |
|---|---|---|
| 1+ | $38.07 | $38.07 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter breakdown voltage is 40V.
The maximum collector current is 1A.
The maximum power dissipation is 6W.
The minimum DC current gain is 30 at 250mA collector current and 1V collector-emitter voltage.
The maximum Vce saturation voltage is 600mV at 125mA base current and 1A collector current.
The transistor is available in a through-hole TO-205AD, TO-39-3 Metal Can package (supplier device package TO-39).
The RoHS status is indicated as RoHS3 Compliant, but this is unverified and should be confirmed with official documentation.