| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
28 pcs
|
28 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Input Capacitance | |
| Mounting Type | |
| Noise Figure |
The 2N4220 is an N-channel, depletion-mode JFET manufactured by Motorola Semiconductor. It is designed for low-frequency and low-noise applications.
Key electrical specifications include a maximum drain-source voltage of 30V, a maximum drain-gate voltage of 30V, and a maximum gate-source voltage of -30V. The device can handle a maximum continuous drain current of 15mA and has a total power dissipation of 300mW at 25°C.
Electrical characteristics include a gate-source cutoff voltage ranging from 4V to 8V, and a zero-gate-voltage drain current (IDSS) that varies by specific model (e.g., 0.5-3.0 mAdc for 2N4220A). The static drain-source on-resistance (RDS(on)) is a maximum of 500 Ohms for the 2N4220A.
This JFET is housed in a TO-72 package and is suitable for through-hole mounting. The operating junction temperature range is up to 175°C, with storage temperatures from -65°C to +200°C.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.77 | $0.77 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage for the 2N4220 is 30 Vdc.
The maximum continuous drain current for the 2N4220 is 15 mAdc.
The total device dissipation for the 2N4220 at 25°C is 300 mW.
The 2N4220 is supplied in a TO-72 package.
The 2N4220 is RoHS3 Compliant.
The Moisture Sensitivity Level for the 2N4220 is 1 Unlimited.
The 2N4220 is REACH Unaffected.