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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,000 pcs
|
2000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
47 pcs
|
47 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Mounting Type | |
| Power | |
| Supplier Device Package | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The 2N4208 is a PNP bipolar junction transistor manufactured by On Semiconductor. It is designed for general-purpose switching and amplification applications requiring low to moderate current and voltage.
Key electrical specifications include a collector-emitter voltage (Vceo) of 12V, a collector current (Ic) of 50mA, and a power dissipation (Pd) of 300mW. The DC current gain (hFE) is a minimum of 30 at Ic=10mA and Vce=300mV, and the collector-emitter saturation voltage (Vce sat) is a maximum of 130mV at Ib=100µA and Ic=1mA.
The transistor is housed in a TO-206AA / TO-18-3 metal can package and is designed for through-hole mounting. The supplier device package is TO-18. This package offers robust mechanical protection and good thermal performance for its power rating.
| Qty | Low | High |
|---|---|---|
| 500+ | $2.07 | $2.07 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The 2N4208 is a PNP bipolar junction transistor.
The collector-emitter voltage (Vceo) is 12V.
The maximum collector current (Ic) is 50mA.
The power dissipation (Pd) is 300mW.
The 2N4208 is available in a TO-206AA / TO-18-3 metal can through-hole package (supplier device package TO-18).
The minimum DC current gain (hFE) is 30 at Ic=10mA and Vce=300mV.
The maximum Vce saturation is 130mV at Ib=100µA and Ic=1mA.