2N4126TA The 2N4126TA is a PNP general purpose amplifier transistor from onsemi. It features a 25V collector-emitter voltage, 200mA collector current, and 625mW power dissipation in a TO-92-3 package.
Mfr Part #:

2N4126TA

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The 2N4126TA is a PNP general purpose amplifier transistor from onsemi. It features a 25V collector-emitter voltage, 200mA collector current, and 625mW power dissipation in a TO-92-3 package.
Total Stock: 11,672 pcs

2N4126TA Available from 1 distributor

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11,672 pcs
11672 pcs On Request 1 On Request On Request 0932+ On Request On Request

2N4126TA Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Base-Emitter Saturation Voltage (Vbe Sat)
Collector Cutoff Current (ICBO)
Collector-Base Breakdown Voltage (V(BR)CBO)
Collector-Base Capacitance (Ccb)
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
DC Current Gain (hFE) (Minimum @ Ic=50 mA, Vce=1 V)
Emitter Cutoff Current (Iebo)
Emitter-Base Breakdown Voltage (V(BR)EBO)
Frequency
Input Capacitance (Cibo)
Lead Style
Mounting Type
Noise Figure (NF)
Operating Temperature
Power
Small Signal Current Gain (hfe)
Supplier Device Package
Thermal Resistance Junction to Ambient (RθJA)
Thermal Resistance Junction-to-Case (RθJC)
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

2N4126TA Description

Short technical summary and product information.

The 2N4126TA is a PNP bipolar junction transistor designed for general purpose amplifier and switching applications. It is specified for collector currents up to 200mA and collector-emitter voltages up to 25V, making it suitable for low-power signal amplification and switching tasks.

 

Key electrical characteristics include a DC current gain (hFE) of 120 to 360 at 2mA collector current, a transition frequency of 250MHz, and a low noise figure of 4dB. The transistor can dissipate up to 625mW and operates over a junction temperature range of -55°C to 150°C.

 

The device is available in a through-hole TO-92-3 package with formed leads, suitable for breadboarding and PCB mounting. It is a general purpose component commonly used in audio preamplifiers, signal conditioning, and low-current switching circuits.

2N4126TA Quick Information

Product Type: Bipolar Junction Transistor (BJT)
Canonical Name: PNP General Purpose Amplifier Transistor
Subcategory: Single PNP Transistor

2N4126TA Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

2N4126TA Features

  • PNP general purpose amplifier transistor.
  • 25V collector-emitter voltage rating.
  • 200mA continuous collector current.
  • 625mW power dissipation capability.
  • Through-hole TO-92-3 package.

2N4126TA Applications

  • General purpose low-power amplification.
  • Signal switching in low-current circuits.
  • Audio preamplifier input stages.
  • Sensor interface and conditioning circuits.

2N4126TA FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage (VCEO) of the 2N4126TA?

The maximum collector-emitter voltage is 25V.

What is the maximum collector current (Ic) of the 2N4126TA?

The maximum continuous collector current is 200mA.

What is the power dissipation rating of the 2N4126TA?

The maximum power dissipation is 625mW.

What is the operating junction temperature range of the 2N4126TA?

The operating junction temperature range is -55°C to 150°C.

What package is the 2N4126TA available in?

The 2N4126TA is available in a TO-92-3 through-hole package with formed leads.

What is the DC current gain (hFE) of the 2N4126TA?

The DC current gain is 120 to 360 at Ic=2mA, Vce=1V.

What is the transition frequency (ft) of the 2N4126TA?

The typical transition frequency is 250MHz at Ic=10mA, Vce=20V.

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