| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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525 pcs
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525 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
9 pcs
|
9 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The 2N4126 is a PNP bipolar junction transistor manufactured by On Semiconductor, designed for general-purpose switching and amplification applications. It features a maximum collector-emitter voltage of 25V and a collector current capability of 200mA, with a power dissipation of 625mW. The transistor offers a minimum DC current gain (hFE) of 120 at 2mA collector current and 1V collector-emitter voltage, ensuring stable performance in low-power circuits.
Electrical characteristics include a typical transition frequency of 250MHz, making it suitable for high-frequency switching up to moderate speeds. The maximum collector-emitter saturation voltage is 400mV at 5mA base current and 50mA collector current, which helps minimize power loss in saturated operation. The device operates over a junction temperature range of -55°C to 150°C, allowing use in harsh environments.
Packaged in the industry-standard TO-92 through-hole package (also known as TO-226-3 or TO-92-3), the 2N4126 is easy to handle and suitable for prototyping and low-volume production. Its through-hole mounting simplifies integration into traditional PCB designs and breadboards.
| Qty | Low | High |
|---|---|---|
| 7,869+ | $0.04 | $0.04 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (Vce) is 25V.
The 2N4126 is available in TO-226-3, TO-92-3 (TO-226AA) and the supplier device package is TO-92.
The operating junction temperature range is -55°C to 150°C.
The part is listed as RoHS3 Compliant, but this status is unverified.
The minimum DC current gain is 120 at Ic=2mA and Vce=1V.
The typical transition frequency (ft) is 250MHz.
The maximum collector current is 200mA.