| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,000 pcs
|
2000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Frequency | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Supplier Device Package | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The 2N4125 is a PNP bipolar junction transistor designed for general-purpose switching and amplification applications. It offers a maximum collector-emitter voltage of 30V and a continuous collector current of 200mA, with a power dissipation of 625mW. The transistor provides a minimum DC current gain (hFE) of 50 at 2mA collector current and 1V Vce, and a transition frequency of 200MHz. The saturation voltage is 400mV maximum at 5mA base current and 50mA collector current. The device is housed in a through-hole TO-92 package (TO-226-3, TO-92-3), suitable for PCB mounting. The operating temperature range is -55°C to 150°C. Compliance data indicates RoHS3 compliant, REACH unaffected, and MSL level 1 (unlimited). Note: Compliance status is unverified and should be confirmed with the manufacturer.
30V.
TO-226-3, TO-92-3 (TO-226AA) through-hole package.
-55°C to 150°C.
RoHS3 compliant (unverified).
Minimum 50 at Ic=2mA, Vce=1V.
200 MHz.
625 mW.