| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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100 pcs
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100 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Thomson-CSF 2N4117 is an N-Channel Junction Field-Effect Transistor (JFET) suitable for general-purpose amplifier applications. It is characterized by low leakage and low capacitance, making it useful in high input impedance circuits.
Key electrical specifications include a Gate-Source Breakdown Voltage of -40V and a maximum Gate Current of 50mA. The device operates within a temperature range of -55°C to +175°C, with a maximum power dissipation of 300mW. The Drain Current at Zero Gate Voltage (IDSS) ranges from 0.02mA to 0.09mA, and the Common-Source Forward Transconductance (gfs) is typically 70μS at 30MHz.
This JFET is available in a TO-72-4 hermetic package, designed for through-hole mounting. The absolute maximum ratings indicate that the Gate-Source or Gate-Drain Voltage should not exceed -40V, and the Gate Current should not exceed 50mA. Storage temperature ranges from -65°C to +200°C.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.93 | $1.93 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The Gate-Source Breakdown Voltage (BVGSS) for the 2N4117 is -40V.
The 2N4117 operates within a temperature range of -55°C to +175°C.
The maximum power dissipation for the 2N4117 is 300mW.
The 2N4117 is available in a TO-72-4 package.
The typical input capacitance (Ciss) of the 2N4117 is 33pF at 1MHz.
The typical common-source forward transconductance (gfs) of the 2N4117 is 70μS at 30MHz.