2N4045 The SP 2N4045 is an NPN monolithic transistor pair designed for various electronic applications. It features a breakdown voltage of 45V and a maximum collector current of 10mA.
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2N4045

Available from 1 distributors
Mfr Name: SP
SP
The SP 2N4045 is an NPN monolithic transistor pair designed for various electronic applications. It features a breakdown voltage of 45V and a maximum collector current of 10mA.
✓ Total Stock: 18 pcs
$ Price Range: $1.93

2N4045 Available from 1 distributor

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2N4045 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Mounting Style
Power Dissipation (Max)

2N4045 Description

Short technical summary and product information.

The 2N4045 from SP is a high-performance NPN monolithic transistor pair. It is constructed with silicon semiconductor material and housed in a TO-78 package, suitable for through-hole mounting.

 

Key electrical characteristics include a Collector-Emitter Breakdown Voltage (V(BR)CEO) of 45V and a maximum Collector Current (I(C) Max.) of 10mA. The device offers a maximum power dissipation of 750mW. The minimum current gain (hFE) is specified at 80 under test conditions of 10uA collector current and 5.0V collector-emitter voltage.

 

This transistor pair is designed for applications requiring matched dual transistors. Its specifications make it suitable for general-purpose amplification and switching circuits where precise matching is beneficial.

2N4045 Quick Information

Product Type: Transistor
Canonical Name: 2N4045 NPN Monolithic Transistor Pair
Subcategory: NPN

2N4045 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

2N4045 Estimated Pricing

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1+ $1.93 $1.93

Estimated market price range - modelled values for guidance only, not live distributor offers.

2N4045 Features

  • NPN monolithic transistor pair.
  • 45V Collector-Emitter Breakdown Voltage.
  • 10mA Maximum Collector Current.
  • 750mW Maximum Power Dissipation.
  • TO-78 package for through-hole mounting.

2N4045 Applications

  • Suitable for switching in low-voltage circuits.
  • Used in signal amplification applications.
  • Ideal for transistor replacement in electronic devices.
  • Applicable in power regulation and control circuits.

2N4045 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the breakdown voltage of the 2N4045 transistor?

The Collector-Emitter Breakdown Voltage (V(BR)CEO) for the 2N4045 is 45V.

What is the maximum collector current for the 2N4045?

The maximum collector current (I(C) Max.) for the 2N4045 is 10mA.

What is the power dissipation of the 2N4045 transistor?

The maximum power dissipation (P(D) Max.) for the 2N4045 is 750mW.

What is the minimum current gain (hFE) of the 2N4045?

The minimum current gain (hFE) for the 2N4045 is 80, measured at 10uA collector current and 5.0V collector-emitter voltage.

What semiconductor material is used in the 2N4045?

The 2N4045 is made from Silicon.

What package type is the 2N4045 available in?

The 2N4045 comes in a TO-78 package.

How is the 2N4045 transistor mounted?

The 2N4045 is designed for through-hole mounting.

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