| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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18 pcs
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18 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The 2N4045 from SP is a high-performance NPN monolithic transistor pair. It is constructed with silicon semiconductor material and housed in a TO-78 package, suitable for through-hole mounting.
Key electrical characteristics include a Collector-Emitter Breakdown Voltage (V(BR)CEO) of 45V and a maximum Collector Current (I(C) Max.) of 10mA. The device offers a maximum power dissipation of 750mW. The minimum current gain (hFE) is specified at 80 under test conditions of 10uA collector current and 5.0V collector-emitter voltage.
This transistor pair is designed for applications requiring matched dual transistors. Its specifications make it suitable for general-purpose amplification and switching circuits where precise matching is beneficial.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.93 | $1.93 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The Collector-Emitter Breakdown Voltage (V(BR)CEO) for the 2N4045 is 45V.
The maximum collector current (I(C) Max.) for the 2N4045 is 10mA.
The maximum power dissipation (P(D) Max.) for the 2N4045 is 750mW.
The minimum current gain (hFE) for the 2N4045 is 80, measured at 10uA collector current and 5.0V collector-emitter voltage.
The 2N4045 is made from Silicon.
The 2N4045 comes in a TO-78 package.
The 2N4045 is designed for through-hole mounting.