| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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150 pcs
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150 pcs | On Request | 1 | On Request | On Request | 8143 | On Request | On Request |
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The CENTRAL SEMICONDUCTOR 2N4033 is a PNP silicon transistor manufactured using the epitaxial planar process. It is designed for high current general purpose amplifier applications.
Key electrical specifications include a Collector-Base Voltage (VCBO) and Collector-Emitter Voltage (VCEO) of 80V, and a continuous collector current (IC) of 1.0A. The device can dissipate up to 1.25W at 25°C ambient temperature or 7.0W at 25°C case temperature.
Thermal characteristics include a junction-to-ambient thermal resistance of 140 °C/W and a junction-to-case thermal resistance of 20 °C/W. The operating and storage junction temperature range is -65 to +200 °C.
This transistor is housed in a TO-39 case and is suitable for through-hole mounting. Electrical characteristics such as DC Current Gain (hFE) vary with operating conditions, ranging from 25 to over 300 depending on the collector current. Transition frequency (fT) is specified up to 400 MHz.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum Collector-Emitter Voltage (VCEO) for the 2N4033 is 80 V.
The continuous collector current rating (IC) for the 2N4033 is 1.0 A.
The 2N4033 transistor comes in a TO-39 case.
The operating and storage junction temperature range for the 2N4033 is -65 to +200 °C.
The DC Current Gain (hFE) of the 2N4033 at VCE=5.0V and IC=100mA is between 100 and 300.