| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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866 pcs
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866 pcs | On Request | 1 | On Request | On Request | On Request | On Request | 2026-02-23 21:33:16 |
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The Central Semiconductor Corp 2N4033 is a PNP silicon transistor manufactured using the epitaxial planar process. It is designed for high current general purpose amplifier applications.
Key electrical specifications include a collector-emitter voltage (VCEO) of 80V and a continuous collector current (IC) of 1.0A. The device offers a maximum power dissipation of 1.25W at ambient temperature and 7.0W at 25°C case temperature. Thermal resistance is 140°C/W junction-to-ambient and 20°C/W junction-to-case.
Electrical characteristics include a DC current gain (hFE) ranging from 100-300 at IC=100mA and a transition frequency (fT) of 100-400 MHz. Saturation voltages are specified, with VCE(SAT) at 0.15V maximum for IC=150mA, IB=15mA.
The transistor is housed in a TO-39 case and is suitable for through-hole mounting. Operating and storage junction temperatures range from -65°C to +200°C.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage is 80V.
The 2N4033 is housed in a TO-39 through-hole package.
The operating junction temperature range is -65 to +200°C.
At Vce=5V and Ic=100mA, the hFE is 100 to 300.
The transition frequency (fT) is 100 to 400 MHz at Vce=10V and Ic=50mA.
At Ic=150mA and Ib=15mA, the saturation voltage is 0.15V; at 500mA/50mA it is 0.5V.
Maximum power dissipation is 1.25W at ambient temperature and 7W at case temperature 25°C.