Ready to onboard?
Are you ready to join DistyParts and
grow your business?
| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
186 pcs
|
186 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Frequency | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The 2N4033 is a PNP bipolar junction transistor manufactured by STMicroelectronics. It is designed for general-purpose switching and amplification applications requiring a collector-emitter breakdown voltage of 80V and a continuous collector current of 1A. The device dissipates up to 800mW of power and operates at junction temperatures up to 175°C.
With a minimum DC current gain (hFE) of 100 at 100mA and 5V, and a maximum Vce saturation of 500mV at 50mA base current and 500mA collector current, the 2N4033 offers predictable performance in linear and switching circuits. Its transition frequency of 500MHz makes it suitable for high-frequency signal processing.
The transistor is housed in a TO-205AD (TO-39-3) metal can package with through-hole mounting, providing robust thermal and mechanical performance. The TO-39 package is commonly used in industrial and military-grade applications where reliability is critical.
The collector-emitter breakdown voltage (VCEO) is 80V.
The maximum collector current (Ic) is 1A.
The power dissipation (Pd) is 800mW.
The 2N4033 is available in a TO-205AD (TO-39-3) metal can package with through-hole mounting.
The maximum operating junction temperature is 175°C.
The minimum DC current gain (hFE) is 100 at Ic=100mA and Vce=5V.
The transition frequency (ft) is 500MHz.