| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
387 pcs
|
387 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Mounting Type | |
| Power | |
| Supplier Device Package | |
| Tape & Reel | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The 2N4033 is a PNP bipolar junction transistor designed by On Semiconductor for general-purpose amplifier and switching applications. It is rated for a collector-emitter breakdown voltage (Vceo) of 80 V and a continuous collector current (Ic) of 1 A, making it suitable for moderate power circuits.
Key electrical characteristics include a DC current gain (hFE) of 75 minimum at Ic=100µA and Vce=5V, and a maximum collector-emitter saturation voltage (Vce(sat)) of 1 V at Ib=100mA and Ic=1A. The device dissipates up to 800 mW of power.
The transistor is housed in a TO-205AD / TO-39-3 metal can package and features through-hole mounting. It is commonly used in linear amplification, driver stages, and switching circuits where medium voltage and current handling are required.
| Qty | Low | High |
|---|---|---|
| 1+ | $8.34 | $8.34 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
80 V.
TO-205AD / TO-39-3 Metal Can (TO-39).
1 A.
800 mW.
75 at Ic=100µA, Vce=5V.
1 V maximum at Ib=100mA, Ic=1A.
Through Hole.