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8 pcs
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8 pcs | On Request | 1 | On Request | On Request | 93+ | On Request | On Request |
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The Central Semiconductor 2N4033 is a PNP silicon transistor manufactured using the epitaxial planar process. It is designed for high current general purpose amplifier applications.
Key electrical specifications include a collector-emitter voltage (VCEO) of 80V and a continuous collector current (IC) of 1.0A. The device offers a maximum power dissipation of 1.25W at ambient temperature and 7.0W at 25°C case temperature. The operating and storage junction temperature range is -65°C to +200°C.
This transistor comes in a TO-39 case and is suitable for through-hole mounting. Electrical characteristics include a DC current gain (hFE) ranging from 70 to 300 at IC=500mA and VCE=5.0V, and a transition frequency (fT) between 100 and 400 MHz.
The 2N4033 is a reliable component for various amplification tasks where high current handling is required.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.85 | $0.85 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) for the 2N4033 is 80V.
The 2N4033 has a continuous collector current (IC) rating of 1.0A.
The operating and storage junction temperature range for the 2N4033 is -65°C to +200°C.
The 2N4033 is available in a TO-39 case and is designed for through-hole mounting.
The DC current gain (hFE) of the 2N4033 at VCE=5.0V and IC=100mA ranges from 100 to 300.
The transition frequency (fT) of the 2N4033 is between 100 and 400 MHz at VCE=10V and IC=50mA.